Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-08-11

1989-06-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

048415359

ABSTRACT:
A semiconductor laser device includes semiconductor layers including a semiconductor layer having a stripe groove having a reverse trapezoidal cross section and a bent active layer spaced from and in the configuration of the groove wherein the bottom width of the groove is less than 2 microns and the distance from the active layer to the bottom of the groove is more than 0.6 micron.

REFERENCES:
patent: 4667332 (1987-05-01), Mihashi et al.
patent: 4734385 (1988-03-01), Mihashi et al.
Mihashi et al, "A Novel Self-Aligned Laser with Small Astigmatism Grown by MO-CVD", 17th Conference on Solid State Devices and Materials, Tolyo, 1985, pp. 63-66.
Mihasi et al, "A Novel Self-Aligned AlGaAs Laser with Bent Active Layer Grown by MOCVD", IEEE 1985, pp. 646-649.

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