Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-02-11

1989-06-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 61, 372 45, H01S 319

Patent

active

048415316

ABSTRACT:
A semiconductor laser having a double hetero structure comprises a cladding layer of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.0.5, 0.5.ltoreq.x+y.ltoreq.1) and an active layer of a strained-layer-superlattice of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) system, thus enabling the lasing of wavelength ranges from infra-red to green.

REFERENCES:
patent: 4494237 (1985-01-01), Di Forte Poisson et al.
patent: 4759024 (1988-07-01), Hayakawa et al.
Suzuki, Papers at the Meeting for Publication of Results of R&D on Applied Optical Measurement and Control System; OAR-R-No. 6, pp. 175-189.
Ludowise et al, Stimulated Mission in Strained GaAs.sub.1-x P.sub.x -GaAs.sub.1-y P.sub.y Superlattices; Appl. Phys. Lett. 42(3), Feb. 1983, pp. 257-259.
Ludowise et al, Continuous 300-K Laser Operation of Strained Superlattices; Appl. Phys. Lett. 42(6), Mar. 1983, pp. 487-489.

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