Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1985-07-24

1988-06-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 49, 372 96, H01S 319

Patent

active

047517107

ABSTRACT:
A tunable semiconductor laser device includes a laser region and a tuning region, with a highly reflective surface formed on the cleaved vertical end facet of the tuning region for providing a reflectivity of 50% or more. The laser and tuning regions are formed on a common semiconductor substrate with the laser region having an active layer formed over the substrate, an optical waveguide layer adjacent the active layer and an electrode for carrying a drive current to the active region. The tuning region, adjacent the laser region on the substrate includes an optical waveguide which extends from the optical waveguide of the laser region, and a tuning current carrying electrode for injecting a tuning current across the waveguide layer of the tuning region. The tuning current alters the refractive index of the waveguide layer interface which changes the phase of the tuning region. Changing the tuning current varies the laser wavelength. The highly reflective end facet assures continuous wavelength tuning. The laser device may be incorporated into an integrated optical local oscillator comprising the laser device, a photodiode, a branched optical waveguide including an input port for mixing the output of the laser device and the light from the input port before being received by the photodiode.

REFERENCES:
patent: 4573158 (1986-02-01), Utaka et al.
patent: 4575851 (1986-03-01), Seki et al.
patent: 4622674 (1986-11-01), Mito
Blum et al., "Monolithic Integrated Optical Circuits", Naval Research Reviews, vol. 28, No. 2, pp. 1-11, Feb. 1975.

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