Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-09-01

1991-05-28

Epps, Georgia

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372102, H01S 308

Patent

active

050200720

ABSTRACT:
A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer, and a second semiconductor layer having the same composition as the first semiconductor layer, successively grown on the active layer, parallel stripe grooves of predetermined period reaching the first semiconductor layer produced at the entire surface of the grown layers, a cladding layer having the same composition as the first semiconductor layer which is re-grown thereon, and a diffraction grating constituted by the remainder of the diffraction grating layer. The coupling coefficient of the light is determined by the film thickness of a layer produced between the active layer and the diffraction grating layer, and the amplitude of the diffraction grating is determined by the layer thickness of the diffraction grating layer. Therefore, the coupling coefficient can be set at a design value at high precision and at high reproducibility.

REFERENCES:
patent: 4716132 (1987-12-01), Hirata
patent: 4782035 (1988-11-01), Fujiwara
patent: 4786951 (1988-11-01), Tokuda et al.
patent: 4847857 (1989-07-01), Ohkura
Itaya et al., "New 1.5 .mu.m . . . Wavelength . . . Laser", Electronics Letters, Nov. 1982, vol. 18, No. 23, pp. 1006-1008.

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