Semiconductor laser device

Coherent light generators – Particular component circuitry – Optical pumping

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357 16, 357 56, 372 43, 372 44, 372 45, 372 46, H01L 3300

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049722387

ABSTRACT:
A semiconductor laser device comprising a semiconductor substrate, a multi-layered mesa stripe having an active layer sandwiched between a semiconductor layer of the same conductivity type as that of the active layer and a semiconductor layer of the oppoiste conductivity type to that of the active layer, and formed on the substrate, a burying layer having a refractive index smaller than that of active layer and burying both sides of the mesa stripe, and a pair of electrodes for supplying a current to active layer. The mesa stripe is constructed such that both sides of active layer neighboring to the semiconductor layer of the opposite conductivity type substantially conincide with those of the semiconductor layer, and that active layer has a width decreasing toward the boundary between active layer and semiconductor layer of the same conductivity type, thereby to form a waist portion at the boundary, and in that a protective layer is formed to fill the waist portion, thus covering at least both sides of the active layer.

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patent: 4847573 (1989-07-01), Fukuzawa et al.
Applied Physics Letter, "Effect of Active Layer Placement of the Threshold Current of . . . ", N. K. Dutta et al., Aug. 1984, pp. 337-338.
Applied Physics Letter, "A New Lateral Selective-area Growth by Liquid-Phase Epitaxy: The Formation . . . " W. T. Tsang et al., Jun. 1982, p. 942.
Patent Abstracts of Japan, Nippon Denshin Denwa Kosha, vol. 10, NO. 117 (E-400) (2174) May 1986.
"Electronics Letters", vol. 20, No. 19, pp. 769-771.

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