Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1979-05-14

1981-05-26

Davie, James W.

Oscillators

Molecular or particle resonant type

H01S 319

Patent

active

042700965

ABSTRACT:
In a stripe geometry buried double heterostructure semiconductor laser device, a first semiconductor layer for effecting laser oscillation upon injection of carriers is sandwiched between second and third semiconductor layers having a wider band gap than the first semiconductor layer. This double heterostructure is partially rendered mesashaped to provide a stripe geometry, and the vacancy resulting from mesa formation is filled with a fourth semiconductor layer having a wider band gap than the first semiconductor layer. In this invention, the region of the first semiconductor layer which is spaced from both end facets of the device by a distance at least equal to the diffusion length of carriers has a narrower band gap that the other regions of the first semiconductor layer.

REFERENCES:
patent: 3363195 (1968-01-01), Furnanage et al.
K. Itoh et al., "Embedded-Stripe GaAs-GaAlAs Double-Heterostructure Lasers with Polycrystalline GaAsP Layers-II: Lasers with Etched Mirrors", IEEE Journal of Quantum Electronics, vol. QE-13, No. 8, Aug. 1977, pp. 628-631.

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