Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-12-14

1990-02-06

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

372 46, H11S 319

Patent

active

048993492

ABSTRACT:
A double-heterostructure multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation. A striped etching-protective thin layer is formed on the double-heterostructure multilayered crystal. A striped-mesa multilayered crystal is formed on the striped etching-protective thin layer. A burying layer is formed on the double-heterostructure multilayered crystal outside of both the striped thin layer and striped-mesa multilayered crystal. This provides refractive index distributions within the active layer corresponding to the inside and the outside of the striped-mesa multilayered crystal. Further, it provides a striped structure which functions as a current path composed of the striped-mesa multilayered crystal.

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Amann, Archiv fur Electronic und Ubertragungste chnik 39(5): 311-316 (1985).
Kawaguchi et al., IEEE Journal of Quantum Electronics QE-13(8): 556-560 (1977).
Kaminow et al., Electronics Letters 17(9):318-320 (1981).

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