Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-02-07

1991-07-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

050349570

ABSTRACT:
A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

REFERENCES:
patent: 4792958 (1988-12-01), Ohba
Y. Kawamura et al., "0.66 mum Room-Temperature Operation of InGaAip DH Laser Diodes Grown by MBE", Electronics Letters, vol. 19, No. 5, Mar. 1983, pp. 163-165.
M. Ishikawa et al., "Room-Temperature cw Operation of InGaP/InGaAiP Visible Light Laser Diodes on GaA Substrates Grown by Metalorganic Chemical Vapor Deposition", Applied Physics Letters, vol. 48, No. 3, 1-86, pp. 207-208.
Hino et al., "Continuous Wave Operation (77K), of Yellow (583.6 nm) Emitting AlGaInP Double Heterostructure Laser Diodes", Applied Physics Letters, vol. 48, No. 9, Mar. 3, 1986, pp. 557-558.
Tanaka et al., "InGaP/InGaAIP Double-Heterostructure and Multiquantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy", J. Appl. Phys., vol. 61, No. 5, 3/1/87, pp. 1713-1719.
Ikeda et al., "Yellow-Emitting AlGaInP Double Heterostructure Laser Diode at 77K Grown by Atmospheric Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett., vol. 45, No. 9, 11/1/84, pp. 964-966.

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