Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-03-13

1991-07-23

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 357 4, 357 17, H01S 319

Patent

active

050349546

ABSTRACT:
A semiconductor laser device including a substrate containing a groove through which the laser light is emitted, a first layer disposed between the substrate and an active layer including a superlattice region opposite the groove and having the same conductivity type as the region in the side walls of the groove and a disordered region in the first layer adjacent the superlattice of a different conductivity type from that of the superlattice region for confining current flow from the substrate to the active layer. A method of producing the semiconductor laser device includes implanting impurity ions which change the conductivity type but suppress the disordering of the superlattice region after annealing. The ions are implanted through the groove and produce the desired conductivity type region in the side walls of the groove.

REFERENCES:
patent: 4675876 (1987-06-01), Svilans
"Microstructure Semiconductor . . . Integrated Circuit", Scientific Monthly Report, vol. 41, No. 11, pp. 910-913, Nov. 1988.
Sakaguchi et al., "Vertical Cavity Surface-Emitting Laser with an AlGaAs/AlAs Bragg Reflector," Electronics Letters, vol. 24, No. 15, Jul. 21, 1988, pp. 928-929.

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