Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2005-11-23

2010-02-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

07656920

ABSTRACT:
A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, of the light produced by the semiconductor laser device is less than 2.3.

REFERENCES:
patent: 5396508 (1995-03-01), Bour et al.
patent: 5412678 (1995-05-01), Treat et al.
patent: 5438584 (1995-08-01), Paoli et al.
patent: 5465266 (1995-11-01), Bour et al.
patent: 5764669 (1998-06-01), Nagai
patent: 5784399 (1998-07-01), Sun
patent: 7072374 (2006-07-01), Matsumura
patent: 2002/0097662 (2002-07-01), Fujii
patent: 2003/0007527 (2003-01-01), Tsukiji et al.
patent: 2004/0057487 (2004-03-01), Nomura et al.
patent: 2005/0041709 (2005-02-01), Anikitchev et al.
patent: 2005/0141579 (2005-06-01), Yamane et al.
patent: 2005/0201439 (2005-09-01), Horie
Kim et al., “High-Power 0.81 μm Tensile Strained GaAsP/InGaP Diode Lasers”, Feb. 2003, Journal of the Korean Physical Society, 42, S293-S296.
Chuang, “Physics of Optoelectronic Devices”, 1995, A Wiley-Interscience Publication, ISBN 0-471-10939-8, 445.
Tansu et al., “High-Performance Strain-Compensated InGaAs-GaAsP-GaAs (λ=1.17μm) Quantum-Well Diode Lasers”, Mar. 2001, IEEE, Photonics Technology Letters, vol. 13, No. 3, 179-181.
Wade et al., “6.1 W continuous wave front-facet power from Al-free active region (λ=805 nm) diode lasers”, Jan. 5, 1998, Appl. Phys. Lett., 72 (1), 4-6.
Wade et al., “8.8W CW power from broad-waveguide Al-free active region (λ=805 nm) diode lasers”,May 28, 1998, IEEE Electronics Letters, 34 (11), 1100-1101.
Wade et al., “High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers”, Jan. 13, 1997, Appl. Phys. Lett., 70 (2), 149-151.
K. Shigihara et al. “High-Power 980-nm Ridge Waveguide Laser Diodes Including an Asymmetrically Expanded Optical Field Normal to the Active Layer”, IEEE Journal of Quantum Electronics, pp. 1081-1088, vol. 38, No. 8, Aug. 2002.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4234266