Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1977-10-06

1979-12-11

Larkins, William D.

Oscillators

Relaxation oscillators

357 16, 331 945H, H01S 319, H01L 29205

Patent

active

041786041

ABSTRACT:
A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, a laser active layer consisting of a p-type GaAs layer disposed on the n-type GaAlAs layer, a first p-type GaAlAs layer disposed on the laser active layer, the surface of which opposing said laser active layer is a periodically corrugated surface, a second p-type GaAlAs layer disposed on the periodically corrugated surface of the first p-type GaAlAs layer, a p-type GaAs layer disposed on the second p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and having a very low threshold value for laser oscillation.

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