Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2006-07-28

2010-06-15

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S044011

Reexamination Certificate

active

07738524

ABSTRACT:
A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film on at least one end surface of an optical resonator, in which the dielectric film includes a first dielectric layer and a second dielectric layer comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.

REFERENCES:
patent: 6396864 (2002-05-01), O'Brien et al.
patent: 2003/0183833 (2003-10-01), Osaka
patent: 1164669 (2001-12-01), None
English language translation of JP 06-104526 (Apr. 15, 1994).
English language translation of JP 09-162497 (Jun. 20, 1997).
Holmes et al., Appl. Phys. Lett., vol. 66, No. 21, pp. 2831-2833, (1995).

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