Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-11-02

2009-06-30

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046013

Reexamination Certificate

active

07555025

ABSTRACT:
A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf.

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