Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-04-26

2008-09-23

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045012, C372S043010

Reexamination Certificate

active

07428256

ABSTRACT:
A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGas cladding layers do not exceed those of the pair of InGaAsP guiding layers.

REFERENCES:
patent: 2005/0169334 (2005-08-01), Sato
patent: 2003-347679 (2003-12-01), None
Knigge, A. et al,; “100 W outpower from passively cooled laser bar with 30% filling factor”,Conference Digest of 2004 IEEE 19thIntl. Semiconductor Laser Conference, Kunibiki Messe, Matsue-shi, Simane Pref., Japan, ThAi, pp. 35-36, (Sept. 2004).

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