Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2008-05-06

2008-05-06

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S038050, C372S087000

Reexamination Certificate

active

11374072

ABSTRACT:
A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

REFERENCES:
patent: 6018540 (2000-01-01), Kinoshita
patent: 6775311 (2004-08-01), Hirukawa
patent: 2002/0159494 (2002-10-01), Tojo et al.
patent: 2003-086902 (2003-03-01), None
Co-pending U.S. Appl. No. 11/276,240, filed Feb. 20, 2006.

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