Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-04-18

1992-03-03

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, H01S 319

Patent

active

050938355

ABSTRACT:
A semiconductor laser device having an active layer sandwiched by semiconductor layers having larger energy band gaps than that of the active layer, includes a semiconductor absorption layer having an energy band gap no larger than that of the active layer and having a thickness periodically changing in the cavity length direction of the resonator close to the active layer so that light which is generated at the active layer reaches the absorption layer, and a semiconductor refractive index matching layer having a larger energy band gap than that of the active layer and a higher refractive index than those of the semiconductor layers sandwiching the active layer to make the equivalent refractive indices in layer thickness direction substantially equal along the resonator direction.

REFERENCES:
patent: 4843032 (1989-06-01), Tokuda et al.
patent: 4894835 (1990-01-01), Uomi et al.
patent: 4941148 (1990-07-01), Yoshida et al.
"Proposal and Fabrication . . . Diode", Japanese Association of Applied Physics, Autumn 1988, p. 834.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-277270