Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-02-06

2007-02-06

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S094000

Reexamination Certificate

active

10700047

ABSTRACT:
A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-AlxGa1-xAs etching stopping layer, a p-AlGaInP second cladding layer with a stripe protrusion, and a p-GaAs contact layer. The portion, other than the stripe-form protrusion, of the p-AlGaInP second cladding layer is covered with an insulating film. The refractive index of the p-AlxGa1-xAs-ESL is nearly equal to the refractive index of each of the lower, first upper, and second upper cladding layers.

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M. Miyashita et al., “High-Power Operation of Low-Operating -Current 660nm Laser Diodes for DVD-RAM/RW,”OECC/IOOC 2001 Conference Incorp. ACOFT,Jul. 2001, pp. 543-544.

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