Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-02-13

2007-02-13

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Gas

C372S045010, C372S046010

Reexamination Certificate

active

10510324

ABSTRACT:
A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index nsfor laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.

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Casey, H.C. Jr. et al. Eds. (1978).Heterostructure Lasers: Part A Fundamental PrinciplesAcademic Press pp. 42-49.

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