Semiconductor laser device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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Details

C257S081000, C257S083000, C257S084000, C372S043010, C372S050210

Reexamination Certificate

active

10968213

ABSTRACT:
A semiconductor laser device includes a one-body submount composed of a predetermined material such as SiC or AlN and placed on a mounting surface. A laser diode is placed on a front portion of an upper surface of the submount. A monitoring photodiode composed of crystalline silicon is stacked on a portion of the upper surface of the submount backward from the laser diode.

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patent: 6072607 (2000-06-01), Tajiri et al.
patent: 2005/0047460 (2005-03-01), Go et al.
patent: 2005/0082550 (2005-04-01), Hamaoka et al.
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patent: 2001-267676 (2001-09-01), None
patent: 2001-345507 (2001-12-01), None
patent: 2002-124468 (2002-04-01), None
patent: 2002-313804 (2002-10-01), None
patent: 2003-100633 (2003-04-01), None

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