Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-05-08

2007-05-08

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046010

Reexamination Certificate

active

10866696

ABSTRACT:
A semiconductor laser device comprises an active layer, a cladding layer, an end face for emitting light. A low-reflective film is provided on the end face. The reflectance of the low-reflective film changes with wavelength. A wavelength at which the reference of the low-reflective film is minimized is on the long wavelength side of a wavelength at which the gain of the semiconductor laser device is maximized. The gain and the loss of the semiconductor laser device become equal at a wavelength only in a wavelength region in which the reflectance of the low-reflective film decreases with increasing wavelength. The reflectance of the low-reflective film is preferably set to 1% or less at the wavelength at which the gain of the semiconductor laser device is maximized.

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