Coherent light generators – Particular active media – Semiconductor
Patent
1996-12-20
1998-10-20
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
058257977
ABSTRACT:
A semiconductor laser device includes a semiconductor substrate of a first conductivity type; a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of a second conductivity type successively disposed on the semiconductor substrate; a first insulating film disposed on the first upper cladding layer and having a stripe-shaped opening; a ridge-striped second upper cladding layer of the second conductivity type grown in the stripe-shaped opening of the first insulating film; a second insulating film disposed on side surfaces of the stripe-shaped ridge and on the first insulating film, a region of the active layer opposite the ridge-striped second upper cladding layer serving as a laser resonator having opposed laser resonator facets. The portions of the active layer adjacent the opposed facets include window regions, each window region having a higher band gap energy than the active region generating the laser beam. Therefore, since the first upper cladding layer, except the portion beneath the ridge, has an intended thickness, optical confinement in the horizontal direction is not adversely affected. Moreover, since the same astigmatism as that of the conventional semiconductor laser device having no window structure can be obtained in the laser device, the semiconductor laser device can be used effectively for collecting light from optical disks and optical fibers.
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Bovernick Rodney B.
Kang Ellen E.
Mitsubishi Denki & Kabushiki Kaisha
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