Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2006-06-13

2006-06-13

Menefee, James (Department: 2828)

Coherent light generators

Particular resonant cavity

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C372S045010, C372S102000

Reexamination Certificate

active

07061963

ABSTRACT:
A semiconductor laser device includes an n type diffraction grating layer of n-InGaAsP on an n-InP substrate, and having through-holes periodically disposed alongside of one another in a laser optical waveguide direction, an n-InP layer containing S as a dopant impurity in a concentration of at least 1×1019cm−3. The through holes are buried in the n-InP layer, and an active layer is disposed on both the n-InP layer and the diffraction grating layer through an n-InP cladding layer.

REFERENCES:
patent: 5023198 (1991-06-01), Strege
patent: 5327450 (1994-07-01), Fujii
patent: 6376338 (2002-04-01), Ekawa et al.
patent: 11-274642 (1999-10-01), None
“The Effects of Dopant on InP Selective Growth by MOVPE”, by NTT Opto-electronics Laboratories, Y. Kondo and Y. Imamura, no date.
“Metalorganic vapor-phase epitaxial regrowth of InP on reactive ion-etched mesa structures for p-substrate buried heterostructure laser application”, By M. Takemi et al., Journal of Crystal Growth 180, 1997 pp. 1-8.
“Improved Selective Growth of InP Around Dry-Etched Mesas by Metalorganic Chemical Vapor Deposition at Low Growth Temperature”, By M. Takemi et al., J. Electoric Materials, vol. 25, No. 3, 1996 pp. 369-374.

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