Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-03-01
2005-03-01
Leung, Quyen (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046012
Reexamination Certificate
active
06862311
ABSTRACT:
A semiconductor laser device includes a lower cladding layer of n-(Al0.66Ga0.34)0.5In0.5P, an active layer having a window structure which has a disordered MQW structure, a first upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P, and a second upper cladding layer of (Al0.66Ga0.34)0.5In0.5P sequentially disposed on an n-GaAs substrate. The refractive index of the first upper cladding layer is smaller than that of the lower cladding layer, and refractive index of the second upper cladding layer is larger than that of the first upper cladding layer and identical to that of the lower cladding layer. The position of peak light intensity at the window structure of the active layer coincides with or very closely approaches the position of the active layer.
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Shigihara, et al.; “High-Power 980-nm Ridge Waveguide Laser Diodes Including an Asymmetrically Expanded Optical Field Normal to the Active Layer”,IEEE J. of Quantum Elec., No. 8, pp. 1081-1088 (Aug. 2002).
Leung Quyen
Leydig , Voit & Mayer, Ltd.
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