Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2005-05-24

2005-05-24

Wong, Don (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S049010

Reexamination Certificate

active

06898224

ABSTRACT:
Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a III-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.

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Growth and properties of liquid-phase epitaxial GaAs1-xSbx, R.E. Nahory et al, Journal of Applied Physics, vol. 48, No. 4, Apr. 1977, pp. 1607-1614.
Application of the CALPHAD method to material design, Hiroshi Ohtani et al, Thermochimica Acta 314, 1998 69-77, pp. 127-135.

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