Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1993-11-04

1996-02-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054917115

ABSTRACT:
A semiconductor laser device having a body with opposed facets and including an active region with aluminum diffused into the active region along the facets thereof. Adding aluminum to the portions of the active region along the facets increases the bandgap of the active region along the facets and provides a semiconductor laser device having an increased catastrophic optical damage (COD) level. The semiconductor laser device is produced by depositing a thin film of aluminum on the facets of the semiconductor laser device and then heat treating to cause diffusion of the aluminum film or phosphorus into the body of the semiconductor laser device along the facets thereof, thereby changing the composition of the semiconductor laser device body along the facets. Alternatively, phosphorus may be diffused into the body of the semiconductor laser device along the facets thereof.

REFERENCES:
patent: 5022037 (1991-06-01), Kawanishi et al.

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