Semiconductor laser device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S775000

Reexamination Certificate

active

06885076

ABSTRACT:
A semiconductor laser device includes a semiconductor laser element, a lead having an element disposing section where elements are disposed and a resin bonded to the lead. The lead has a thick portion and a thin portion with the thick portion being formed to extend at least in the direction of the width of the resin to cover a region having a length equal to or greater then the width of the resin. A semiconductor laser device has a semiconductor laser element, a lead having an element mount portion on which the semiconductor laser element is mounted and a resin maintained in intimate contact with the lead. The lead has a thicker portion and a thinner portion. The thicker portion is formed to extend in the direction of the width of the resin over a width equal to or greater than the width of the resin.

REFERENCES:
patent: 6020632 (2000-02-01), Barone et al.
patent: 63-168931 (1988-11-01), None
patent: 02-054263 (1990-04-01), None
patent: 06-045703 (1994-02-01), None
patent: 06-053603 (1994-02-01), None
patent: 07-326814 (1995-12-01), None
patent: 07-0321407 (1995-12-01), None
patent: 09-092931 (1997-01-01), None
patent: 10-154848 (1998-06-01), None
patent: 10-209551 (1998-08-01), None
patent: 11-307871 (1999-11-01), None
patent: 2000-164966 (2000-06-01), None
A copy of International Preliminary Examination Report (Japanese) completed on Jun. 25, 2002.
A copy of International Search Report mailed on Sep. 25, 2001.

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