Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2005-04-26

2005-04-26

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

With means to shield device contained in housing or package...

C257S431000, C257S017000, C372S043010

Reexamination Certificate

active

06885085

ABSTRACT:
A semiconductor laser device has an n-type AlGaAs first cladding layer2,a multiple quantum well active layer3,and a p-type AlGaAs second cladding layer4formed in this order and supported by an n-type GaAs substrate1.The multiple quantum well active layer3has two quantum well layers3aand barrier layers3bprovided on both sides of each quantum well layer3a.The quantum well layers3aare each made of In1-v1Gav1As1-w1Pw1, while the barrier layers3bare each made of In1-v2Gav2As1-w2Pw2. Here, v1and v2satisfy v1<v2,while w1and w2satisfy w1<w2.The barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.

REFERENCES:
patent: 5644587 (1997-07-01), Kaneno et al.
patent: 6127691 (2000-10-01), Fukunaga et al.
patent: 6327293 (2001-12-01), Salokatve et al.
patent: 1 104 057 (2001-05-01), None
patent: 10-4237 (1998-01-01), None
patent: 11-220224 (1999-08-01), None

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