Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2008-05-06

2008-05-06

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S038050, C372S087000

Reexamination Certificate

active

07369592

ABSTRACT:
A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

REFERENCES:
patent: 6018540 (2000-01-01), Kinoshita
patent: 6775311 (2004-08-01), Hirukawa
patent: 2002/0159494 (2002-10-01), Tojo et al.
patent: 2003-086902 (2003-03-01), None
Co-pending U.S. Appl. No. 11/276,240, filed Feb. 20, 2006.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2785596