Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2011-01-11

2011-01-11

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular resonant cavity

Specified cavity component

C372S050110, C372S020000, C372S096000, C372S002000

Reexamination Certificate

active

07869482

ABSTRACT:
A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λcof a reflectance spectrum satisfies the relation λSP−10 nm≦λc≦λSP+10 nm with respect to an emission peak wavelength λSPof spontaneous emission in the active layer.

REFERENCES:
patent: 5568499 (1996-10-01), Lear
patent: 2008/0285609 (2008-11-01), Ohta et al.
T. Takeuchi et al., “Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells”, Jpn. J. Appl. Phys. vol. 39 (2000), pp. 413-416.
“Characteristics of InGaN laser diodes in the pure blue region,” Shin-ichi Nagahama et al., Applied Physics Letters, vol. 79, No. 13; Sep. 24, 2001; pp. 1948-1950.
“Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm,” K. Kojima et al.; Applied Physics Letters, vol. 89 (2006); pp. 241127-1 through 241127-3.

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