Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2011-08-16

2011-08-16

Nguyen, Dung (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045010, C372S046010

Reexamination Certificate

active

08000365

ABSTRACT:
A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

REFERENCES:
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patent: 6522676 (2003-02-01), Goto et al.
patent: 2003/0086459 (2003-05-01), Momose
patent: 2008/0285611 (2008-11-01), Fujimoto
patent: 2010/0074290 (2010-03-01), Kawaguchi et al.
patent: 2000-286504 (2000-10-01), None
patent: 2003-198057 (2003-07-01), None

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