Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1979-05-17

1981-07-07

Davie, James W.

Oscillators

Molecular or particle resonant type

357 17, H01S 319

Patent

active

042777593

ABSTRACT:
A first N-AlGaAs and a second N-GaAs layer are successively grown on an I-GaAs substrate. A third N-AlGaAs, a fourth P-AlGaAs and a fifth N-GaAs layer superpose one another on the second layer except for one lateral portion. Those portions of the five layers remote from the exposed second layer portion are changed into a P.sup.+ type and surrounded by a P zone. A positive and a negative electrode are located on the fifth layer and the exposed second layer portion respectively. The negative electrode is nearest to a laser region located in the second layer and can be secured to a heat sink.

REFERENCES:
patent: 3990096 (1976-11-01), Namizaki et al.
patent: 4166278 (1979-08-01), Susaki et al.
patent: 4183038 (1980-01-01), Namizaki et al.
Kumabe et al., "High Temperature Single-Mode CW Operation with a Junction-Up TJS Laser", Appl. Phys. Lett.33(1), Jul. 1, 1978, pp. 38-39.
Namizaki, "Transverse-Junction-Stripe Lasers with a GaAS p-n Homojunction", IEEE J. of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975, pp. 427-431.

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