Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-05-17

1989-08-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

048602990

ABSTRACT:
A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

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