Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1993-04-15

1994-12-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053751353

ABSTRACT:
A semiconductor laser device includes a substrate and a laminated structure formed on a top face of the substrate. The laminated structure includes (a) first and second guide layers and (b) a quantum well structure of compound semiconductor interposed between the first and second guide layers. The quantum well structure serves as a resonator of the device and includes at least one quantum well layer and at least one barrier layer. The quantum well layer has a thickness L.sub.z and the barrier layer has the energy gap larger than the energy gap of the quantum well layer so as to form a energy difference V.sub.0 between the bottom of the conduction band of the quantum well layer and the bottom of the conduction band of the barrier layer. The relationship represented by formula (I) is satisfied:

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patent: 5287377 (1994-02-01), Fakuzawa et al.
Matsumoto, N., et al., "Low threshold current, high quantum efficiency 1.5 .mu.m GalnAs-GalnAsP GRIN-SCH single quantum well laser diodes" IEEE Journal of Quantum Electronics 27(6):1790-1793, Jun. 1991.
Tanbun-Ek, T., et al., "Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy" Applied Physics Letters 55(22):2283-2285, Nov. 1989.
Ishiguro, H., et al., "InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition" Applied Physics Letters 52(25):2099-2101, Jun. 1988.
Zhu, L. D., et al., "Optical gain in GaAs/GaAlAs graded-index separate-confinement single-quantum-well heterostructures" IEEE Journal of Quantum Electronics 25(6):1171-1178, Jun. 1989.

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