Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-08-10

1996-10-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

055685021

ABSTRACT:
A semiconductor laser device includes resonator facets formed by cleaving; a first conductivity type semiconductor region; a semiconductor multilayer structure disposed on the first conductivity type semiconductor region and including at least an active layer and upper and lower cladding layers sandwiching the active layer, the semiconductor multilayer structure functioning as a laser; first and second electrodes for supplying current to the semiconductor multilayer structure to generate light in that structure; a second conductivity type semiconductor region disposed in the vicinity of the semiconductor multilayer structure so that the light generated in the semiconductor multilayer structure is directly applied to the second conductivity type region, the second conductivity type region contacting the first conductivity type semiconductor region to produce a pn junction; and a third electrode electrically contacting the second conductivity type region for outputting signals when a voltage is applied across the third electrode and one of the first and second electrodes. Since the light-responsive region, i.e., the pn junction, is included in the laser device, an external photodetector is dispensed with, so the cost of the laser device is significantly reduced.

REFERENCES:
patent: 5404370 (1995-04-01), Otsubo et al.
patent: 5422904 (1995-06-01), Gorfinkel et al.
patent: 5424559 (1995-06-01), Kasahara
Tanigami et al, "Micro Collimated Beam Using Laser Diode Integrated With Micro Fresnel Lens", The Japan Society of Applied Physics, 1988, p. 858.
Sugimoto et al, "Integration Of 1.5 .mu.m InGaAsP/InP Lasers With A Photodiode Using C.sub.2 H.sub.6 /H.sub.2 RIE", The Japan Society of Applied Physics, 1989, p. 938.
Komazaki et al, "Small Astigmatism, High Power And Low Noise 0.78 .mu.m Self-Aligned Lasers", Electronics Letters, vol. 25, No. 4, 1989, pp. 295-296.

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