Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1996-01-11

1997-10-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 437129, H01S 319

Patent

active

056756011

ABSTRACT:
A semiconductor laser device includes, on a first conductivity type GaAs substrate, successively, a first conductivity type GaAs buffer layer, a first conductivity type Al.sub.s Ga.sub.1-s As (0<s<1) cladding layer, a quantum well active layer having a structure that can produce an oscillation wavelength of 0.9.about.1.2 .mu.m and including a well layer comprising In.sub.x Ga.sub.1-x As (0<x<1) and a barrier layer comprising Al.sub.y Ga.sub.1-y As (0<y<s), a second conductivity type Al.sub.t Ga.sub.1-t As (1<t<y) upper cladding layer, a second conductivity type GaAs contact layer, and a multiple reflection film layer alternatingly laminating first and second semiconductor materials which have the same conductivity type as the adjacent semiconductor materials and have the different refractive indices in number of layers, first and second electrodes, and a pair of laser resonator facets perpendicular to the active layer and the multiple reflection film layer. Therefore, a semiconductor laser device in which generation of large mode hops is suppressed, the generation of kinks is reduced, and stable and high power output laser beams are produced is realized.

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