Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1996-02-20

1998-01-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057063044

ABSTRACT:
A semiconductor laser device includes a first conductivity type GaAs substrate; a first conductivity type first lower cladding layer disposed on the GaAs substrate, lattice-matching with the GaAs substrate, and having an energy band gap; a first conductivity type AlGaAs second lower cladding layer disposed on the first lower cladding layer and having an energy band gap larger than the energy band gap of the first lower cladding layer; an active layer disposed on the second lower cladding layer and having an energy band gap smaller than the energy band gap of the first lower cladding layer; a second conductivity type AlGaAs second upper cladding layer disposed on the active layer and having an energy band gap; a second conductivity type first upper cladding layer disposed on the second upper cladding layer, lattice-matching with the GaAs substrate, and having an energy band gap larger than the energy band gap of the active layer and smaller than the energy band gap of the second upper cladding layer; a second conductivity type GaAs contact layer disposed on the first upper cladding layer; and first and second electrodes respectively disposed on the substrate and the contact layer. In this structure, the stress within the crystalline structure of the laser device is reduced and the crystalline defect density is reduced, whereby the reliability of the device is improved.

REFERENCES:
patent: 4671830 (1987-06-01), Burnham
patent: 5321712 (1994-06-01), Itaya et al.
patent: 5566198 (1996-10-01), Horie et al.
patent: 5583880 (1996-12-01), Shakuda

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