Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-08-14

1997-01-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

055965920

ABSTRACT:
A semiconductor laser device includes a ridge waveguide having two side surfaces, a crystalline burying layer disposed at both side surfaces of the ridge waveguide, and a second conductivity type contact layer disposed on the burying layer and the ridge waveguide. The burying layer includes a first conductivity type first current blocking layer in contact with the side surfaces of the ridge waveguide, a second conductivity type second current blocking layer disposed on a portion of the first current blocking layer and separated from the ridge waveguide by a portion of the first current blocking layer near the ridge waveguide, a first conductivity type third current blocking layer disposed on a portion of the first current blocking layer near the ridge waveguide and on the second current blocking layer, and a second conductivity type final burying layer disposed on the third current blocking layer. In this structure, there is no pn junction at a regrowth interface between the final burying layer and the contact layer so that reduction in the forward voltage of the pn junction in continuous operation is avoided and increasing leakage current is suppressed so that the threshold current and light output of the laser do not deteriorate over time.

REFERENCES:
patent: 4637845 (1987-01-01), Hirano
patent: 5383213 (1995-01-01), Irikawa et al.
patent: 5390205 (1995-02-01), Mori et al.
patent: 5426658 (1995-06-01), Kaneno et al.
patent: 5452315 (1995-09-01), Kimura et al.

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