Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-03-13

1990-04-10

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, H01S 319

Patent

active

049167090

ABSTRACT:
A semiconductor laser device includes an active layer, a pair of different conductivity type cladding layers having a wider energy band gap than that of the active layer, sandwiching the active layer. One of the cladding layers has a stripe ridge or stripe groove. A high dopant concentration diffusion region having the same conductivity type as that of the cladding layer is disposed on the stripe ridge or the stripe groove. Therefore, a refractive index difference is provided in the two directions transverse to the length of the resonant cavity and a low astigmatism. Furthermore, because the light confinement is strengthened, the light emission efficiency is also enhanced.

REFERENCES:
patent: 4667332 (1987-05-01), Mihashi et al.
patent: 4821278 (1989-04-01), Yang et al.
patent: 4847845 (1989-07-01), Omura et al.
Mawst et al., "Complementary Self-Aligned Laser By Metalorganic Chemical Vapor Deposition", Electronics Letters., vol. 21, No. 20, Sep. 26, 1985, pp. 903-905.

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