Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-09-21

1992-03-10

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 31, 372 46, 372 99, 372108, H01S 319, H01S 3082

Patent

active

050954890

ABSTRACT:
A semiconductor laser device having a pair of cavity facets provided confronting to each other and conducting a laser oscillation at wavelength .lambda., includes a reflection film having a reflectivity R.sub.1 against a laser light of wavelength .lambda. provided on one of cavity facets among the pair of cavity facets, and partial reflection films having a reflectivity R.sub.2 higher than the reflectivity R.sub.1 against laser light of wavelength .lambda., provided at a plurality of portions of the laser oscillation regions in parallel with each other on the reflection film. Therefore, a semiconductor laser device in which the active layer emits light uniformly without arising filamentation is obtained.

REFERENCES:
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patent: 4744088 (1988-05-01), Heinen et al.
patent: 4764929 (1988-08-01), Thaniyavarn
patent: 4791650 (1988-12-01), Tatsuno et al.
patent: 4805176 (1989-02-01), Botez et al.
patent: 4870649 (1989-09-01), Bobeck et al.
patent: 4942588 (1990-07-01), Yasui et al.
patent: 4972427 (1990-11-01), Streifer et al.
Matsumoto et al., "Single-Lobed Far-Field . . . Shifter", Applied Physics Letters 50(22), 1987, pp. 1541-1543.

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