Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-07-15

1988-12-13

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

047916494

ABSTRACT:
A multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation on a V-stripe channeled substrate having a current-blocking layer thereon. The active layer further includes regions by means of which carriers within the active layer are prevented from diffusing outside of the active layer. These regions are disposed facing each other with an optical waveguide therebetween which is formed by the absorption of light by the portions of the current-blocking layer which are positioned at both sides of the striped channel. The distance between the regions is narrower than the width of the optical waveguide in the vicinity of both facets and wider than the width of the optical waveguide inside of both facets.

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