Coherent light generators – Particular active media – Semiconductor
Patent
1997-06-20
1999-11-02
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
372 45, 372 48, 372 96, 437133, 331 945, H01S 319
Patent
active
059784024
ABSTRACT:
An integrated modulator and semiconductor laser device includes a semiconductor substrate; an optical waveguide including an active layer having a width and a cladding layer, and disposed on the semiconductor substrate, the optical waveguide including a laser part and a modulator part modulating the intensity of laser light; a semi-insulating semiconductor layer disposed on opposite sides of the optical waveguide; a low-resistance contact layer for making an ohmic contact with an electrode material, disposed on the optical waveguide, being absent between the laser part and the modulator part, and having a width equivalent to the width of the active layer. Since the contact layer with a stripe structure having a width equivalent to that of the active layer is used in making ohmic contact to the electrode material, the cladding layer of the second conductivity type below the contact layer is narrowed as well, and the isolation between the laser and the modulator is also improved with good controllability without narrowing by etching. The flow of current between the contact layer of the laser part and the contact layer of the modulator part is reduced. As a result, the isolation between the laser part and the modulator part is improved by one order of magnitude over the prior art semiconductor laser device.
REFERENCES:
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patent: 5764670 (1998-06-01), Ouchi
Aoki et al., "InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 2088-2096.
Aoki et al., "High-Speed (10Gbit/s) And Low-Drive-Voltage (1 V Peak To Peak) InGaAs/InGaAsP MQW Electroabsorption-Modulator Integrated DFB Laser With Semi-Insulating Buried Heterostructure", Electronics Letters, vol. 28, No. 12, Jun. 1992, pp. 1157-1158.
Matsumoto Keisuke
Nishimura Takashi
Bovernick Rodney
Kim Sung T.
Mitsubishi Denki & Kabushiki Kaisha
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