Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1991-04-29

1992-11-03

Davie, James W.

Coherent light generators

Particular beam control device

Tuning

372 92, 372 99, 372107, H01S 319

Patent

active

051611643

ABSTRACT:
A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n<2) from the first quantum level to the n-th quantum level in which the front facet reflectivity and the rear facet reflectivity are asymmetrical so that oscillation can occur at the n-th quantum level, a reflecting mirror having a reflectivity that causes oscillation of the semiconductor element to occur at a quantum level lower than the n-th quantum level, and a reflecting mirror moving unit for positioning the reflecting mirror in the neighborhood of the front facet or the rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which can oscillate at two or more wavelengths with a simple construction is obtained.

REFERENCES:
patent: 4589115 (1986-05-01), Burnham et al.
patent: 4680769 (1987-07-01), Miller
patent: 4757507 (1988-07-01), Wondrazek
patent: 4852115 (1989-07-01), Viherkoski
patent: 4993036 (1991-02-01), Ikeda et al.
Tokuda et al., "Widely Separated . . . Injection Current Control", Applied Physics Letters 49 (24), 1986, pp. 1629-1631.
Mehuys et al., "Optimised Fabry-Perot (AlGa)As Quantum-Well Lasers Tunable Over 105 nm", Electronics Letters, vol. 25, No. 2, 1989, pp. 143-145.
Cai et al., "Multiple Quantum Well-Tuned GaAs/AlGaAs Laser", Electronics Letters, vol. 25, No. 2, 1989, pp. 145-146.

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