Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1978-03-29

1980-01-08

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 18, 357 58, 331 945H, H01L 3300

Patent

active

041830385

ABSTRACT:
N type GaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr. Zn is diffused into predetermined portions of those layers to a depth reaching the substrate to form pn junctions between the original n type regions of the layers and their regions are converted to the p from the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.

REFERENCES:
patent: 3961996 (1976-06-01), Namizaki
patent: 3990096 (1976-11-01), Namizaki
patent: 4065729 (1977-12-01), Gover

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