Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-04-18

1996-09-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055598196

ABSTRACT:
The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.

REFERENCES:
patent: 4315226 (1982-02-01), Chinone et al.
patent: 4328469 (1982-05-01), Scifres et al.
patent: 4740977 (1988-04-01), Ikeda
patent: 5410159 (1995-04-01), Sugawara et al.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1935300