Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-09-27

1996-09-24

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 18, 257 96, H01S 318, H01L 3300

Patent

active

055598188

ABSTRACT:
The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.

REFERENCES:
patent: 5132981 (1992-07-01), Uomi et al.
patent: 5146466 (1992-09-01), Hamada et al.
patent: 5181086 (1993-01-01), Yoshida
patent: 5373166 (1994-12-01), Buchan et al.
Briggs et al., "Gain and Threshold Characteristics of Strain-Compensated Multiple-Quantum-Well Lasers", IEEE Ph ot. Tech. Letters, vol. 4, No. 5, May 1992.

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