Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-03-17

1989-12-19

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 50, 372 96, 372 26, H01S 319

Patent

active

048887838

ABSTRACT:
In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer.

REFERENCES:
patent: 4658402 (1987-04-01), Kobayashi
patent: 4674100 (1987-06-01), Kobayashi
patent: 4720835 (1988-01-01), Akiba et al.
patent: 4755015 (1988-07-01), Uno et al.
Uematsu et al., "Grating-Coupled GaAs--CaAlAs Lasers with Distributed Bragg Reflectors," Electronica Letters, Dec. 8, 1977, vol. 13, No. 25, pp. 759-760.
Shames et al., "Monolithic Integration of GaAs-(GaAl)As Light Modulators and Distributed-Bragg-Reflector Lasers," Appl. Phys. Lett., 32(5), Mar. 1, 1978, pp. 314-316.
Appl. Phys. Lett., 49(10), Tarucha et al., "Voltage-Controlled Optical Bistability Associated with Two-Dimensional Exciton in GaAs-AlGaAs Multiple Quantum Well Lasers", Sep. 1986, pp. 543-545.
IEEE Journal of Quantum Electronics, Bol. QE-22, No. 9, Sep. 1986, "Temperature Dependence of Bistable InGaAsP/InP Lasers", Liu et al., pp. 1579-1586.

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