Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-12-10

1991-12-03

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

050705105

ABSTRACT:
A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the <011> direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

REFERENCES:
patent: 4737961 (1988-04-01), Mori et al.
patent: 4868838 (1989-09-01), Yamamoto
patent: 4935935 (1990-06-01), Reed et al.
Journal of Crystal Growth 84, "Orientation Dependence . . . Low-Pressure OMVPE", K. Kamon et al. (1987), pp. 126-132.
Journal of Crystal Growth 93, "A Self-Aligned Ridge Substrate . . . MOVPE", A. Yoshikawa et al. (1988), pp. 843-849.
Electronics Letters, vol. 24, No. 19, Sep. 15, 1988, "Low Threshold . . . One-Step MOCVE", H. Narui et al., 1249-1250.
Kamon et al., "Selective Growth of GaAs and AlGaAs by Low Pressure OMVPE", Lecture in the 2nd Symposium of Crystal Engineering, held on Jul. 19, 1985, pp. 11-15 (with partial English translation).

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