Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1994-10-18

1996-02-27

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 33, H01S 318

Patent

active

054954932

ABSTRACT:
According to a semiconductor laser device of the present invention, the thickness and carrier concentration of a current blocking layer are set so as to cause a punch through on the current blocking layer when the semiconductor laser device is driven at a current which is one to ten times as large as a maximum rated value of a DC driving current. Both a light absorbing layer and a photocurrent blocking layer are formed between the current blocking layer and a second clad layer in order to prevent a light turn-on phenomenon from occurring. The light absorbing layer contacts the second clad layer and is constituted of a semiconductor crystal of a p-type conductivity type, which is undoped or has a low concentration. The photocurrent blocking layer contacts the current blocking layer and is constituted of a semiconductor crystal of the p-type conductivity type. If the band gaps of the light absorbing layer, photocurrent blocking layer, and active layer are represented by E.sub.ab, E.sub.ocb, and E.sub.ga, respectively, the following relationships are satisfied E.sub.ab .ltoreq.E.sub.ga, E.sub.ocb >E.sub.ga.

REFERENCES:
patent: 5144633 (1992-09-01), Ohnaka et al.

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