Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1980-10-31

1983-01-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 50, H01S 319

Patent

active

043695132

ABSTRACT:
Disclosed is a semiconductor laser element having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and means for constructing an optical resonator, the semiconductor laser element comprising the fact that the means to inject current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in traveling direction of a laser beam, and that laser radiations emitted in correspondence with the respective stripe conductive regions form a simply connected net and give rise to nonlinear interactions among them. As a typical example of the current injection means, the conductive regions have a strip-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser element in which the phases and wavelengths of the laser radiations of the respective strips are uniform is realized.

REFERENCES:
patent: 4219785 (1980-08-01), Scifres et al.
patent: 4251780 (1981-02-01), Scifres et al.
Ikegami et al, "Planar Stripe with Waist/Notch (SWAN) Injection Laser", Electronics Letters, Nov. 23, 1978, vol. 14, No. 24, pp. 753-754.
de Waard, "A Novel Single Mode Laser Having Periodic Variations in the Stripe Width (Super DFB), Conference Proceedings of the Optical Communication Conference", Amsterdam, Netherlands, 17-19 Sep. 1979, pp. 18.4-1-18.4-3.
Appl. Phys. Lett. 33(12), Dec. 15, 1978, pp. 1015-1017.
RCA Technical Notes, RCA TN No. 760, Apr. 1968.

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