Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1987-07-24

1989-03-28

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 46, 372 47, 372 49, 372 50, H01S 319

Patent

active

048171107

ABSTRACT:
A semiconductor laser having an active layer of quantum well structure, where the resonator loss is enhanced thereby to conduct an oscillation at a high quantum level.

REFERENCES:
patent: 4326176 (1982-04-01), Aiki et al.
patent: 4329660 (1982-05-01), Yano et al.
patent: 4546480 (1985-10-01), Burnham et al.
patent: 4573158 (1986-02-01), Utaku et al.
patent: 4577321 (1986-03-01), Carney et al.
patent: 4630083 (1986-12-01), Yamakoshi
patent: 4665528 (1987-05-01), Chinone et al.
patent: 4671830 (1987-06-01), Burnham
Applied Physics Letters 47 (8), Oct. 1985 pp. 781-783.
Applied Physics Letters 45 (1), Jul. 1984 pp. 1-3.
Applied Physics Letters 48 (1), Jan. 1986 pp. 7-9.
Applied Physics Letters 49 (24), Dec. 1986 pp. 1629-1631.
Applied Physics Letters 51 (21) Nov. 1987 pp. 1664-1666.
Journal of Applied Physics 60 (8) Oct. 1986 pp. 2729-2234.
"Embedded Structure Quantum Well Laser (oscillation between higher energy levels)", by Mitsunori Sugimoto et al. Nihon Electric Co. Ltd.
"CW Multiwavelength Transverse-Junction-Stripe Lasers Grown by Molecular Beam Epitaxy Operating Predominantly in Single-Longitudinal Modes", by W. T. Tsant, Applied Physics Letters, vol. 36, pp. 441 to 443 (1980).

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